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Creators/Authors contains: "Mazumder, Abdullah_Al Mamun"

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  1. ; ; ; ; ; ; (, Japanese Journal of Applied Physics)
    Abstract In this paper we present a study of distribution polarization doped AlxGa1−xN layers and their use in quasi-vertical configuration pn-diodes which exhibited a high breakdown field of ∼8.5 MV cm−1and a large forward current density (∼23 kA cm−2). We also establish their potential use in UVC light emitters by studying the optical emission from a quantum well inserted at the distribution polarization doped pn-junction interface. 
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    Free, publicly-accessible full text available May 1, 2026
  2. ; ; ; ; ; ; ; (, Applied Physics Express)
    Abstract High voltage (∼2 kV) Al0.64Ga0.36N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm2). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si3N4surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress. 
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